AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction

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Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

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Publisher URL: http://dx.doi.org/10.1109/VLSIT.2015.7223692

Abstract

For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Electronics and Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date of acceptance:	18 March 2015
Date of first compliant Open Access:	11 January 2016
Date Deposited:	09 Oct 2015 10:08
Last Modified:	13 Apr 2022 15:13
URI:	https://ljmu-9.eprints-hosting.org/id/eprint/1330

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